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Document DEVICE REPORT002-28997 CYW20719B2 CYW20721B2 Enhanced Low Power Bluetooth 5.0 BLE 2 Mbps LE EDR Integrated SOCDocument #: 002-28997 Rev. *A Issue Date: 3/9/2020 _______________________________________________________________________________________________________________________ Cypress Semiconductor Reliability Qualification Report QTP# 190301, 192004 Version *A CYW20719B2 / CYW20721B2 CYW20719B2 / CYW20721B2, Enhanced Low Power, Bluetooth 5.0/BLE/2 Mbps LE/EDR/Integrated SOC FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Bak Lee Chan Reliability Engineer Approved By: David Hoffman Reliability Director Reviewed By: Yusaku Ohta Reliability Manager A printed copy of this document is considered uncontrolled. Refer to online copy for latest version. Page 1 of 9 Document #: 002-28997 Rev. *A Issue Date: 3/9/2020 _______________________________________________________________________________________________________________________ I.A. Product and Package Information _______________________________________________________________________________________________________________________ Product Description: CYW20719B2KWB9GT Cypress Division: IoT Division Enhanced Low Power, Bluetooth 5.0/BLE/2 Mbps LE/EDR/Integrated SOC _______________________________________________________________________________________________________________________ Package: WLCSP QTP: 190301 Description: (3.31 x 3.22 x 0.33mm) 134 Ball, Wafer Level Chip Scale Package (WLCSP) Flammability: O2 Index: Assembly: ASE Taiwan Molding Compound: N/A UL-V0 >28 Electrical Test: ASE Taiwan Substrate/Leadframe: N/A Die Attachment: N/A Lead Finish: 98.2Sn / 1.8Ag Comments: _______________________________________________________________________________________________________________________ Est. Field Temperature: Est. DC Field Current: Est. Field Voltage: 55 °C 20 mA 1.2 V Life Test Temperature: Life Test Dynamic Current: Life Test Voltage: 125 °C 20 mA 1.38 V Est. Field Power Dissipation: 24 mWatts Est. Stress Power Dissipation: 27.6 mWatts _______________________________________________________________________________________________________________________ Die: Process: Type: 20719YPB2DA 40NM LP Bluetooth Die Size: Fab: Density: 3.35 x 3.26 mm TSMC N/A A printed copy of this document is considered uncontrolled. Refer to online copy for latest version. Page 2 of 9 Document #: 002-28997 Rev. *A Issue Date: 3/9/2020 _______________________________________________________________________________________________________________________ I.B. Product and Package Information _______________________________________________________________________________________________________________________ Product Description: CYW20721B2KUMLG Cypress Division: IoT Division Enhanced Low Power, Bluetooth 5.0/BLE/2 Mbps LE/EDR/Integrated SOC _______________________________________________________________________________________________________________________ Package: QFN QTP: 190301a Description: (5 x 5 x 0.6mm) 40 Pin, Quad Flat No Lead Package (QFN) Flammability: O2 Index: Assembly: SPIL-TAIWAN Molding Compound: HITACHI_CEL-9240-HF UL-V0 >28 Electrical Test: ASE Singapore Substrate/Leadframe: Copper Leadframe Die Attachment: Hitachi EN-4900GC Lead Finish: 100% Matte Sn Plating Comments: _______________________________________________________________________________________________________________________ Est. Field Temperature: Est. DC Field Current: Est. Field Voltage: 55 °C 20 mA 1.2 V Life Test Temperature: Life Test Dynamic Current: Life Test Voltage: 125 °C 20 mA 1.38 V Est. Field Power Dissipation: 24 mWatts Est. Stress Power Dissipation: 27.6 mWatts _______________________________________________________________________________________________________________________ Die: Process: Type: 20721PB2DA 40NM LP QFN Die Size: Fab: Density: 3.35 x TSMC N/A 3.26 mm A printed copy of this document is considered uncontrolled. Refer to online copy for latest version. Page 3 of 9 Document #: 002-28997 Rev. *A Issue Date: 3/9/2020 _______________________________________________________________________________________________________________________ I.C. Product and Package Information _______________________________________________________________________________________________________________________ Product Description: CYW20721B2KWB9GT Cypress Division: IoT Division Enhanced Low Power, Bluetooth 5.0/BLE/2 Mbps LE/EDR/Integrated SOC _______________________________________________________________________________________________________________________ Package: WLCSP QTP: 190301b Description: (3.31 x 3.22 x 0.33mm) 134 Ball, Wafer Level Chip Scale Package (WLCSP) Flammability: O2 Index: Assembly: ASE Taiwan Molding Compound: N/A UL-V0 >28 Electrical Test: ASE Taiwan Substrate/Leadframe: N/A Die Attachment: N/A Lead Finish: 98.2Sn / 1.8Ag Comments: _______________________________________________________________________________________________________________________ Est. Field Temperature: Est. DC Field Current: Est. Field Voltage: 55 °C 20 mA 1.2 V Life Test Temperature: Life Test Dynamic Current: Life Test Voltage: 125 °C 20 mA 1.38 V Est. Field Power Dissipation: 24 mWatts Est. Stress Power Dissipation: 27.6 mWatts _______________________________________________________________________________________________________________________ Die: Process: Type: 20721YPB2DA 40NM LP Bluetooth Die Size: Fab: Density: 3.35 x 3.26 mm TSMC N/A A printed copy of this document is considered uncontrolled. Refer to online copy for latest version. Page 4 of 9 Document #: 002-28997 Rev. *A Issue Date: 3/9/2020 _______________________________________________________________________________________________________________________ I.D. Product and Package Information _______________________________________________________________________________________________________________________ Product Description: CYW20719B2KUMLG Cypress Division: IoT Division Enhanced Low Power, Bluetooth 5.0/BLE/2 Mbps LE/EDR/Integrated SOC _______________________________________________________________________________________________________________________ Package: QFN QTP: 190301c Description: (5 x 5 x 0.6mm) 40 Pin, Quad Flat No Lead Package (QFN) Flammability: O2 Index: Assembly: SPIL-TAIWAN Molding Compound: HITACHI_CEL-9240-HF UL-V0 >28 Electrical Test: ASE Singapore Substrate/Leadframe: Copper Leadframe Die Attachment: Hitachi EN-4900GC Lead Finish: 100% Matte Sn Plating Comments: _______________________________________________________________________________________________________________________ Est. Field Temperature: Est. DC Field Current: Est. Field Voltage: 55 °C 20 mA 1.2 V Life Test Temperature: Life Test Dynamic Current: Life Test Voltage: 125 °C 20 mA 1.38 V Est. Field Power Dissipation: 24 mWatts Est. Stress Power Dissipation: 27.6 mWatts _______________________________________________________________________________________________________________________ Die: Process: Type: 20719B2DA 40NM LP QFN Die Size: Fab: Density: 3.35 x TSMC N/A 3.26 mm A printed copy of this document is considered uncontrolled. Refer to online copy for latest version. Page 5 of 9 Document #: 002-28997 Rev. *A Issue Date: 3/9/2020 _______________________________________________________________________________________________________________________ I.E. Product and Package Information _______________________________________________________________________________________________________________________ Product Description: CYW20721B2KUMLG Cypress Division: IoT Division Enhanced Low Power, Bluetooth 5.0/BLE/2 Mbps LE/EDR/Integrated SOC _______________________________________________________________________________________________________________________ Package: QFN QTP: 192004 Description: (5 x 5 x 0.6mm) 40 Lead, Quad Flat No Lead Package (QFN) Flammability: O2 Index: Assembly: ASE Taiwan Molding Compound: Sumitomo EME G700LA UL-V0 >28 Electrical Test: ASE Taiwan Substrate/Leadframe: Copper Leadframe Die Attachment: Hitachi EN-4900F Lead Finish: 100% Matte Sn Plating Comments: _______________________________________________________________________________________________________________________ Est. Field Temperature: Est. DC Field Current: Est. Field Voltage: 55 °C 20 mA 1.2 V Life Test Temperature: Life Test Dynamic Current: Life Test Voltage: 125 °C 20 mA 1.38 V Est. Field Power Dissipation: 24 mWatts Est. Stress Power Dissipation: 27.6 mWatts _______________________________________________________________________________________________________________________ Die: Process: Type: 20721PB2DA 40NM LP QFN Die Size: Fab: Density: 3.35 x TSMC N/A 3.26 mm A printed copy of this document is considered uncontrolled. Refer to online copy for latest version. Page 6 of 9 Document #: 002-28997 Rev. *A Issue Date: 3/9/2020 _______________________________________________________________________________________________________________________ II. 40nm GLL/LP/RF Life Test Failure Rate Calculation _______________________________________________________________________________________________________________________ HTOL Stress Temperature - 125 °C Failure Mechanism PLASTIC Sample Size Zero fails, Process ave. Ea Read Points / Test Results 24 168 500 1000 hrs hrs hrs hrs 2716 2519 1559 0* 0 0 1559 0 Modeling Parameters @ 55 °C Avg. Failure Rate FITS @ 55 °C, 60% Conf. Ea eV TAF VAF OAF MTTF (yrs) PPM FIT 0.66 71 1 71 Totals 0 0 0 0 * - Contributes to early life FITS 14269 0 8 A printed copy of this document is considered uncontrolled. Refer to online copy for latest version. Page 7 of 9 Document #: 002-28997 Rev. *A Issue Date: 3/9/2020 _______________________________________________________________________________________________________________________ III. Summary of Stress Test Results _______________________________________________________________________________________________________________________ Package Sample Num. of Num. of Failure Stress Test Stress Condition Type Size Lots Fails Rate % Comments _______________________________________________________________________________________________________________________ Data From Qualification 190301, 190301a, 192004: High Temp Bake (175°C) QFN 3 45 1 0 0.00 500 Hours ESD CDM N/A N/A N/A WLCSP 1 3 QFN 2 3 QFN 3 3 1 0 0.00 Passed 500V 1 0 0.00 Passed 500V 1 0 0.00 Passed 1.0kV ESD HBM N/A N/A WLCSP 1 3 QFN 2 3 1 0 0.00 Passed 2.0kV 1 0 0.00 Passed 2.0kV Latch Up (125°C, +/- 200mA) (125°C, +/- 200mA) WLCSP 1 3 QFN 2 3 1 0 0.00 Passed 1 0 0.00 Passed Preconditioning (PC2/260°C, +0°C/-5°C) QFN 3 383 3 Passed Precon+Temp Cycle (PC2/260°C, -65°C/150°C) QFN 3 231 3 0 0.00 500 Cycles Precon+HAST (PC2/260°C, Biased, 130°C/85% RH) QFN 3 75 3 0 0.00 96 Hours Precon+uHAST (PC2/260°C, Unbiased, 130°C/85% RH) QFN 3 77 1 0 0.00 96 hours Solderability N/A QFN 3 9 1 Passed _______________________________________________________________________________________________________________________ Notes / Justification: 1) Results from Qual 190301, CYW20719B2KWB9GT, 40NM LP Bluetooth in 134 Ball WLCSP (3.31 x 3.22 x 0.33mm) 2) Results from Qual 190301a, CYW20721B2KUMLG, 40NM LP QFN in 40 Pin QFN (5 x 5 x 0.6mm) 3) Results from Qual 192004, CYW20721B2KUMLG, 40NM LP QFN in 40 Lead QFN (5 x 5 x 0.6mm) Preconditioning Flows: PC2 (JEDEC L3): Bake 125°C, 24hr => Soak @ 30°C/60%RH, 192hr => 3x Reflow Reliability Tests Performed per Specification Requirements Stress Condition ESD CDM N/A ESD HBM N/A High Temp Bake (175°C) Latch Up (125°C, +/- 200mA) Precon+HAST (PC2/260°C, Biased, 130°C/85% RH) Precon+Temp Cycle (PC2/260°C, -65°C/150°C) Precon+uHAST (PC2/260°C, Unbiased, 130°C/85% RH) Preconditioning (PC2/260°C, +0°C/-5°C) Solderability N/A Specification Reference JS002 / AEC-Q100-011 JS001 / AEC-Q100-002 JESD22-A103 JESD78 / AEC Q100-004 JESD22-A110 JESD22-A104 JESD22-A118 J-STD-020 J-STD-002 A printed copy of this document is considered uncontrolled. Refer to online copy for latest version. Page 8 of 9 Document #: 002-28997 Rev. *A Issue Date: 3/9/2020 _______________________________________________________________________________________________________________________ IV. Revision History _______________________________________________________________________________________________________________________ Document Number: Document Title: 002-28997 CYW20719B2 / CYW20721B2, Enhanced Low Power, Bluetooth 5.0/BLE/2 Mbps LE/EDR/Integrated SOC Rev. Issue Date ** 11/18/2019 ECN# Originator 6733035 BAKC Initial Release. Description *A 3/9/2020 6825712 BAKC Added QFN Package Data Trademarks and Notice The contents of this document are subject to change without notice. This document may contain information on a Cypress product under development by Cypress. Cypress reserves the right to change or discontinue work on any product without notice. The information in this document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Cypress assumes no liability for any damages of any kind arising out of the use of the information in this document. Copyright © 2019- 2020 Cypress Inc. All rights reserved. A printed copy of this document is considered uncontrolled. Refer to online copy for latest version. Page 9 of 9Microsoft: Print To PDF